High quality GaAs epilayers with dislocation densities of 1.2 x 106cm-2 on (100)Si substrates have been obtained by insertion of an InGaAs strained interlayer (SIL) combined with a thermal cycle annealing instead of strained layer superlattices. All the layers were grown by low-pressure metalorganic vapor phase epitaxy. The threading dislocation density near the surface of 4 ƒÊm thick GaAs was measured by plan-view transmission electron microscopy. The threading dislocation density was found to be very sensitive to the In composition of the interlayer and the specifics of thermal cycle annealing.

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