Layers of InP grown on GaAs substrates by a two-step growth using metalorganic vapor phase epitaxy have been investigated. We have succeeded in improving the crystallinity of InP epilayers on GaAs substrates by employing a low V/III ratio for initial layer growth. The initial layers of InP were characterized by transmission electron microscopy. By lowering the V/III ratio to 20 during the growth of initial layers at 400 C, the surface became smooth and the X-ray diffraction peak intensity increased. The full width at half maximum of X-ray rocking curve is as small as 163 arcsec for a 3 um InP layer. Using a low V/III ratio for initial alyer growth is effective in improving the crystallinity of InP epilayers.

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